Calculation of the Al-Ga-In-As phase diagram and LPE growth of AlxGayIn1-x-yAs on InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Electron mobility and energy gap of In0.53Ga0.47As on InP substrate
2. LPE Growth of Misfit Dislocation‐Free Thick In1 − x Ga x As Layers on InP
3. Phase Diagram of Al‐Ga‐In‐As Quaternary System
4. Solid‐liquid equilibria calculations for LPE of AlvGa1−u−vInuAs on InP
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1. Metal Organic Vapor Phase Growth of Complex Semiconductor Alloys;AIP Conference Proceedings;2010
2. Al-As-In (Aluminium-Arsenic-Indium);Non-Ferrous Metal Systems. Part 1;2006
3. First-order Raman spectra from In1-x-yGaxAlyAs epitaxial layers grown on InP substrates;The European Physical Journal B;2001-11
4. Influence of solution convection on LPE InxGa1-xSb;Journal of Crystal Growth;1990-01
5. The formation of alxGa1-xAs layers by regrowth on the surface of GaAs during its contact with the undersaturated liquid-containing Al;Journal of Crystal Growth;1986-11
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