In situ monitoring of stacking fault formation and its carrier lifetime mediation in p-type 4H-SiC
Author:
Affiliation:
1. National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
2. National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
Funder
New Energy and Industrial Technology Development Organisation (NEDO)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4891834
Reference33 articles.
1. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
2. Driving Force of Stacking-Fault Formation in SiCp−i−nDiodes
3. Recombination-Induced Stacking Faults: Evidence for a General Mechanism in Hexagonal SiC
4. Degradation of hexagonal silicon-carbide-based bipolar devices
5. Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode
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