Built-in field reduction in InGaN/GaN quantum dot molecules
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3665069
Reference28 articles.
1. Solid-State Lighting
2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
3. InGaN-based blue laser diodes
4. Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots
5. Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting
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1. Built-in potential and ground state switching in coupled InGaN/GaN quantum wires;Solid State Communications;2022-11
2. Highly Efficient Excitonic Recombination of Non-polar ($$11\overline{2}0$$) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy;Scientific Reports;2020-02-07
3. Capping layer thickness and quantum dot height dependences of strain and internal field distributions in wurtzite InGaN/GaN quantum dots;Superlattices and Microstructures;2019-04
4. Study on Optical Properties of Indium-Graded Semipolar InGaN/GaN Quantum Well;IEEE Photonics Journal;2016-06
5. Growth of non-polar InGaN quantum dots with an underlying AlN/GaN distributed Bragg reflector by metal-organic vapour phase epitaxy;Superlattices and Microstructures;2015-12
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