Growth of non-polar InGaN quantum dots with an underlying AlN/GaN distributed Bragg reflector by metal-organic vapour phase epitaxy
Author:
Funder
EPSRC
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference23 articles.
1. Room-Temperature Triggered Single Photon Emission from a III-Nitride Site-Controlled Nanowire Quantum Dot
2. A gallium nitride single-photon source operating at 200 K
3. Temporal variation in photoluminescence from single InGaN quantum dots
4. Built-in field reduction in InGaN/GaN quantum dot molecules
5. Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy
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1. Semiconductor nanopillar as a single-photon emitter and its optimal design;THE 4TH INTERNATIONAL CONFERENCE ON MATERIALS ENGINEERING AND NANOTECHNOLOGY (ICMEN 2021);2022
2. Electrostatic built-in fields in wurtzite III-N nanostructures: Impact of growth plane on second-order piezoelectricity;Physical Review B;2017-10-20
3. Effects of Strain in Low-Dimensional Semiconductor Structures;Nanoscience and Nanotechnology Letters;2017-07-01
4. Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification;Scientific Reports;2017-03-27
5. Non-polar InxGa1−xN/GaN quantum dots: impact of dot size and shape anisotropies on excitonic and biexcitonic properties;Journal of Physics D: Applied Physics;2016-12-02
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