Built-in potential and ground state switching in coupled InGaN/GaN quantum wires-Reference-Cited by-同舟云学术

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Built-in potential and ground state switching in coupled InGaN/GaN quantum wires

Published:2022-11 Issue: Volume:356 Page:114949
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Park Seoung-Hwan^ORCID

Funder

Ministry of Education, Science and Technology

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference32 articles.

1. Quantum Dot Heterostructure;Bimberg,1999

2. Handbook of Optoelectronic Device Modeling and Simulation;Piprek,2017

3. Multidimensional quantum well laser and temperature dependence of its threshold current

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