Effects of (NH4)2Sx treatment on indium nitride surfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3318685
Reference38 articles.
1. Surface charge accumulation of InN films grown by molecular-beam epitaxy
2. Intrinsic Electron Accumulation at Clean InN Surfaces
3. Origin of electron accumulation at wurtzite InN surfaces
4. Absence of Fermi-Level Pinning at Cleaved Nonpolar InN Surfaces
5. Intrinsic limitations to the doping of wide-gap semiconductors
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2. Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN;Journal of Applied Physics;2019-07-28
3. Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT;ECS Journal of Solid State Science and Technology;2018
4. Chemical modification of InN surface with sulfide solution;Applied Surface Science;2017-11
5. Electrical characterization of atomic layer deposited Al2O3/InN interfaces;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-01
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