Interfacial characteristics of N-incorporated HfAlO high-k thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1764595
Reference13 articles.
1. Characterization of SiO2/Si(100) interface structure of ultrathin SiO2films using spatially resolved electron energy loss spectroscopy
2. Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition
3. Dielectric characteristics of Al2O3–HfO2 nanolaminates on Si(100)
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