Dielectric characteristics of Al2O3–HfO2 nanolaminates on Si(100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1499223
Reference13 articles.
1. Characterization of SiO2/Si(100) interface structure of ultrathin SiO2films using spatially resolved electron energy loss spectroscopy
2. Transistor characteristics with Ta/sub 2/O/sub 5/ gate dielectric
3. Intermixing at the tantalum oxide/silicon interface in gate dielectric structures
4. MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics
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