Chemical vapor deposition of Si on chlorosilane-treated SiO2 surfaces. I. Suppression and enhancement of Si nucleation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1402977
Reference19 articles.
1. Growth Kinetics, Silicon Nucleation on Silicon Dioxide, and Selective Epitaxy Using Disilane and Hydrogen in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition Reactor
2. Selective epitaxial growth by UHV-CVD using Si2H6 and Cl2
3. Effects of hydrogen surface pretreatment of silicon dioxide on the nucleation and surface roughness of polycrystalline silicon films prepared by rapid thermal chemical vapor deposition
4. Resistless pattern definition and Si selective-area deposition using an ultrathin SiO2 mask layer treated by SiHCl3
5. Controlled bond formation between chemical vapor deposition Si and ultrathin SiO[sub 2] layers
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