Position-Specified Formation of Epitaxial Si Grains on Thermally Oxidized Si(001) Surfaces via Isolated Nanodots-Reference-Cited by-同舟云学术

Position-Specified Formation of Epitaxial Si Grains on Thermally Oxidized Si(001) Surfaces via Isolated Nanodots

Published:2004-08-06 Issue:18 Volume:16 Page:3518-3523
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Yasuda Tetsuji¹,Tada Tetsuya¹,Yamasaki Satoshi¹,Gwo Shangjr¹,Hong Lu-Sheng¹

Affiliation:

1. Joint Research Center for Atom Technology (JRCAT), Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Central 4, Tsukuba 305-8562, Japan, Department of Physics, National Tsing Hua University, Hsinchu 300, Taiwan, Republic of China, and Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, Republic of China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm049492v

Reference35 articles.

1. Frontiers of silicon-on-insulator

2. Thermal Oxidation of Silicon in Dry Oxygen Growth‐Rate Enhancement in the Thin Regime: I . Experimental Results

3. Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition

4. Selective epitaxial growth by UHV-CVD using Si2H6 and Cl2

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. “Nanovegetation” World;Handbook of Less-Common Nanostructures;2012-03-19

2. Less-Common Nanostructures in the Forms of Vegetation;Industrial & Engineering Chemistry Research;2010-11-17

3. Initial growth of chemical-vapor-deposited Ru from bis(hexafluoroacetylacetonate)dicarbonyl ruthenium;Thin Solid Films;2005-07

4. Organometallic Polycondensation for Conjugated Polymers;Conjugated Polymer Synthesis