Controlled bond formation between chemical vapor deposition Si and ultrathin SiO[sub 2] layers-Reference-Cited by-同舟云学术

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Controlled bond formation between chemical vapor deposition Si and ultrathin SiO[sub 2] layers

Published:2000 Issue:3 Volume:18 Page:1752
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Yasuda T.,Nishizawa M.,Yamasaki S.,Tanaka K.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Germanium interactions with Si-etched silicon dioxide;Surface Science;2008-09

2. Wet-Chemical Treatment of Si[sub 3]N[sub 4] Surfaces Studied Using Infrared Attenuated Total Reflection Spectroscopy;Journal of The Electrochemical Society;2005

3. Formation of self-assembly and the mechanism of Si nanoquantum dots prepared by low pressure chemical vapor deposition;Acta Physica Sinica;2003

4. Growth of high-density Si nanoparticles on Si3N4 and SiO2 thin films by hot-wire chemical vapor deposition;Journal of Applied Physics;2002-10-15

5. Thermal desorption effects in chemical vapor deposition of silicon nanoparticles;Journal of Crystal Growth;2002-08

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