Growth Kinetics, Silicon Nucleation on Silicon Dioxide, and Selective Epitaxy Using Disilane and Hydrogen in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition Reactor-Reference-Cited by-同舟云学术

Growth Kinetics, Silicon Nucleation on Silicon Dioxide, and Selective Epitaxy Using Disilane and Hydrogen in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition Reactor

Published:1994-11-01 Issue:11 Volume:141 Page:3269-3273
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Violette Katherine E.¹²,Sanganeria Mahesh K.¹²,Öztürk Mehmet C.¹²,Harris Gari¹²,Maher Dennis M.¹²

Affiliation:

1. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695‐7911

2. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695‐7916

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2059317/pdf

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