The effect of the anneal ambient on implanted GaAs and the occurrence of compensated regions in Si implants
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89435
Reference8 articles.
1. OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE
2. Ion implantation in compound semiconductors–an approach based on solid state theory
3. Comparison of Group IV and VI Doping by Implantation in GaAs
4. Thermodynamic and Experimental Aspects of Gallium Arsenide Vapor Growth
5. Silicon‐ and selenium‐ion‐implanted GaAs reproducibly annealed at temperatures up to 950 °C
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Chapter 1 Active Layer Formation by Ion Implantation;Semiconductors and Semimetals;1990
2. Comparison of low temperature and high temperature refractory metal/silicides self-aligned gate on GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1986-11
3. Capless annealing of silicon implanted gallium arsenide;Solid-State Electronics;1983-04
4. Ion‐implanted Se in GaAs;Journal of Applied Physics;1980-08
5. Ion implantation of sulfur in Cr‐doped InP at room temperature;Journal of Applied Physics;1980-08
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