Silicon‐ and selenium‐ion‐implanted GaAs reproducibly annealed at temperatures up to 950 °C
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88260
Reference10 articles.
1. Zn and Te Implantations into GaAs
2. EFFICIENT DOPING OF GaAs BY Se+ ION IMPLANTATION
3. Electrical properties of Cd, Zn and S ion-implanted layers in GaAs
4. CONDUCTIVITY AND HALL MOBILITY OF ION‐IMPLANTED SILICON IN SEMI‐INSULATING GALLIUM ARSENIDE
5. Properties of ion implanted silicon, sulfur, and carbon in gallium arsenide
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