New deep level luminescence bands observed from both a SiGe alloy layer and Si/Ge superlattice structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105908
Reference14 articles.
1. Theoretical calculations of heterojunction discontinuities in the Si/Ge system
2. Structural and electronic properties of epitaxial thin-layerSinGensuperlattices
3. Optical window in strained‐layer Si/Ge microstructures
4. Structurally induced optical transitions in Ge-Si superlattices
5. Photoluminescence from Si/Ge superlattices
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1. Luminescence from Germanium and Germanium on Silicon;Solid State Phenomena;2013-10
2. Photoluminescence from Localized Excitons in Si/Ge Superlattices;Japanese Journal of Applied Physics;1994-04-30
3. Growth and photoluminescence characterization of pseudomorphic SiGe single quantum wells;Journal of Crystal Growth;1993-02
4. Band edge and deep level photoluminescence of fully strained Si1−xGex/Si alloys;Thin Solid Films;1992-12
5. Photoluminescence of confined excitons in MBE-grown Si1 − xGex/Si(100) single quantum wells;Thin Solid Films;1992-12
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