Growth and photoluminescence characterization of pseudomorphic SiGe single quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Excitonic photoluminescence from Si-capped strainedSi1−xGexlayers
2. Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells
3. Near‐band‐gap photoluminescence from pseudomorphic Si1−xGexsingle layers on silicon
4. Near‐band‐gap photoluminescence of Si1−xGexalloys grown on Si(100) by molecular beam epitaxy
5. Direct observation of band‐edge luminescence and alloy luminescence from ultrametastable silicon‐germanium alloy layers
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1. Molecular beam epitaxial growth and photoluminescence investigation of Si1−yCy layers;Thin Solid Films;1998-05
2. Low-temperature molecular beam epitaxy of Si1−x−yGexCy/Si quantum well structures: electrical and optical properties;Thin Solid Films;1998-05
3. SiGeC: Band gaps, band offsets, optical properties, and potential applications;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05
4. Spatially indirect radiative recombination of carriers localized in Si1−x−yGexCy/Si1−yCy double quantum well structure on Si substrates;Applied Physics Letters;1996-08-26
5. Intense photoluminescence observed in modulation doped Si/SiGe quantum well structures;Applied Surface Science;1996-08
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