Excitonic photoluminescence from Si-capped strainedSi1−xGexlayers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.11525/fulltext
Reference14 articles.
1. Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy
2. Band alignments of coherently strained GexSi1−x/Si heterostructures on 〈001〉 GeySi1−ysubstrates
3. Novel Si1−xGex/Si heterojunction internal photoemission long‐wavelength infrared detectors
4. Near-band-gap photoluminescence of Si-Ge alloys
5. Near‐band‐gap photoluminescence of Si1−xGexalloys grown on Si(100) by molecular beam epitaxy
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