70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge
Author:
Affiliation:
1. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
2. Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569, Japan
Funder
Iwatani Naoji Foundation
JGC-S Scholarship Foundation
Japan Society for the Promotion of Science (JSPS)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4913744
Reference37 articles.
1. Band anticrossing in highly mismatchedSnxGe1−xsemiconducting alloys
2. Origin of the unusually large band-gap bowing and the breakdown of the band-edge distribution rule in theSnxGe1−xalloys
3. Electronic structure of SnxGe1−x alloys for small Sn compositions: Unusual structural and electronic properties
4. Achieving direct band gap in germanium through integration of Sn alloying and external strain
5. The direct and indirect bandgaps of unstrained SixGe1−x−ySnyand their photonic device applications
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