Mg acceptor doping in MOCVD (010) β-Ga2O3
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
2. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Funder
NSF
Air Force Office of Scientific Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/5.0031562
Reference38 articles.
1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
2. MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
3. Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga2O3Layers Grown by MOVPE on (010)-Oriented Substrates
4. Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3
5. Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE
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