Electrical properties of p–n junctions based on superlattices of AlN/AlGa(In)N-Reference-Cited by-同舟云学术

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Electrical properties of p–n junctions based on superlattices of AlN/AlGa(In)N

Published:2003-08-18 Issue:7 Volume:83 Page:1319-1321
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kuryatkov V.,Zhu K.,Borisov B.,Chandolu A.,Gherasoiu Ìu.,Kipshidze G.,Chu S. N. G.,Holtz M.,Kudryavtsev Yu.,Asomoza R.,Nikishin S.,Temkin H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1603333

Reference26 articles.

1. High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

2. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN

3. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN

4. Efficient 230–280 nm emission from high-Al-content AlGaN-based multiquantum wells

5. Efficient 230–280 nm emission from high-Al-content AlGaN-based multiquantum wells

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2. Kinetics of Metal-Rich PA Molecular Beam Epitaxy of AlGaN Heterostructures for Mid-UV Photonics;Molecular Beam Epitaxy;2018

3. On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes;Materials;2017-10-24

4. Review—Group III-Nitride-Based Ultraviolet Light-Emitting Diodes: Ways of Increasing External Quantum Efficiency;ECS Journal of Solid State Science and Technology;2017

5. Surface morphology and crystal orientation of electrodeposited tungsten coatings with different pulse parameters;Rare Metals;2016-12-20

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