Study and Analysis of Electrical Behavior for ZnTe/InSb Heterojunction-Reference-Cited by-同舟云学术

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Study and Analysis of Electrical Behavior for ZnTe/InSb Heterojunction

Published:2022-11-24 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 19th India Council International Conference (INDICON)
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Author:

Mondal Supratik¹,Mukherjee Iraban¹,Pandey Saurabh Kumar²

Affiliation:

1. Indian Institute of Engineering Science and Technology,Department of Electronics and Telecommunication Engineering,Shibpur,India

2. Indian Institute of Technology Patna,Sensors and Optoelectronics Research Group (SORG),Department of Electrical Engineering,Bihta,India,801106

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10038981/10039721/10040173.pdf?arnumber=10040173

Reference24 articles.

1. Analytical Model for 2DEG Density in Graded MgZnO/ZnO Heterostructures With Cap Layer

2. nGepGaAs Heterojunctions

3. TEM studies of structural defects in HgTe/HgCdTe quantum wells;yu bonchyk;Applied Nanoscience,2019

4. Electrical Characteristics and Photoresponse of ZnO/ZnTe Heterojunction Diodes

5. Numerical modeling of heterojunctions including the thermionic emission mechanism at the heterojunction interface

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