Influence of electron injection on performance of GaN photodetectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1448382
Reference11 articles.
1. High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures
2. Improved ultraviolet quantum efficiency using a semitransparent recessed window AlGaN/GaN heterojunction p-i-n photodiode
3. Back illuminated AlGaN solar-blind photodetectors
4. Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy
5. Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices
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