Review—Opportunities in Single Event Effects in Radiation-Exposed SiC and GaN Power Electronics-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Review—Opportunities in Single Event Effects in Radiation-Exposed SiC and GaN Power Electronics

Published:2021-07-01 Issue:7 Volume:10 Page:075004
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Pearton S. J.^ORCID,Haque Aman,Khachatrian Ani,Ildefonso Adrian^ORCID,Chernyak Leonid,Ren Fan

Funder

Division of Materials Research

North Atlantic Treaty Organization

Defense Threat Reduction Agency

Division of Electrical, Communications and Cyber Systems

United States - Israel Binational Agricultural Research and Development Fund

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/2162-8777/ac12b8/pdf

Reference92 articles.

1. Evaluation of system reliability and heavy ion angular effects;Berg,2019

2. Compendium of total ionizing dose and displacement damage results from NASA goddard spaceflight center;Campola,2016

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrathin-Body GaN-on-Sapphire HEMT With Megahertz Switching Capability Under Prompt Irradiation Dose Rate Exceeding 10¹⁰ rad(Si)/s;IEEE Electron Device Letters;2024-08

2. TCAD Simulation of the Effect of Buffer Layer Parameters on Single Event Burn-Out in p-GaN Gate HEMTs;IEEE Transactions on Electron Devices;2024-07

3. 1.5-kV AlGaN/GaN MIS-HEMT With 3-D Stacking Pad-Connected Schottky Structure Demonstrating Radiation Robustness Against Atmospheric Neutrons;IEEE Electron Device Letters;2024-07

4. Localized Stress Effects on the Single Event Effects Sensitivity of Microelectronics;ECS Journal of Solid State Science and Technology;2024-06-03

5. Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3