Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2766841
Reference20 articles.
1. Deep ultraviolet light-emitting diodes
2. Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels
3. 292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base
4. Relaxation of compressively-strained AlGaN by inclined threading dislocations
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