Structural characterization of AlN thin films grown on sapphire by atomic layer deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy;Kinoshita;Appl. Phys. Express,2012
2. Packageless AlN/ZnO/Si structure for SAW devices applications;Legrani;IEEE Sens. J,2013
3. Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodes;Ren;Appl. Phys. Lett.,2007
4. Effect of growth temperature on AlN thin films fabricated by atomic layer deposition;Kim;Ceram. Int.,2018
5. Structural and stress properties of A1GaN epilayers grown on A1N-nanopatterned sapphire templates by hydride vapor phase epitaxy;Tasi;Nanomaterials,2018
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