Origin and improvement of interface roughness in AlGaAs/GaAs heterostructures grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104025
Reference11 articles.
1. Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxy
2. GaAs/Ga1−xAlxAs and Ga1−xAlxAs/GaAs heterointerfaces grown by molecular beam epitaxy
3. Realization of high mobility in inverted AlxGa1−xAs/GaAs heterojunctions
4. Realization of high mobility in inverted AlxGa1−xAs/GaAs heterojunctions
5. Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities
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