GaAs/Ga1−xAlxAs and Ga1−xAlxAs/GaAs heterointerfaces grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference11 articles.
1. Moderate mobility enhancement in single period AlxGa1−xAs/GaAs heterojunctions with GaAs on top
2. Extrinsic layer at AlxGa1−xAs‐GaAs interfaces
3. presented at the 2nd Intern. Symp. on MBE and Clean Surfaces Techniques;Gossard,1982
4. Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxy
5. A pragmatic approach to adatom‐induced surface reconstruction of III‐V compounds
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Enhanced diffusion in laser-annealed nonstoichiometric AlAs/GaAs heterostructures;Journal of Applied Physics;2000
2. The role of excess arsenic in interface mixing in low‐temperature‐grown AlAs/GaAs superlattices;Applied Physics Letters;1995-08-28
3. Growth of high quality AlGaAs/GaAs heterostructures by molecular beam epitaxy for photonic and electronic device applications;Thin Solid Films;1993-08
4. Variation of background impurities in AlxGa1−xAs (0.3 ≤ χ ≤ 0.4) with growth temperature: implications for device leakage current and surface/heterointerface roughness;Journal of Crystal Growth;1991-05
5. High-temperature growth of Si-doped AlGaAs by molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1990-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3