Investigation of the terahertz emission characteristics of MBE-grown GaAs-based nanostructures-Reference-Cited by-同舟云学术

Investigation of the terahertz emission characteristics of MBE-grown GaAs-based nanostructures

Published:2010-05 Issue:7 Volume:32 Page:776-779
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Takatori Satoru,Minh Pham Hong,Estacio Elmer,Cadatal-Raduban Marilou,Nakazato Tomoharu,Shimizu Toshihiko,Bailon-Somintac Michelle,Somintac Armando,Defensor Michael,Gabayno Jacqueline,Awitan Fritz Christian B.,Jaculbia Rafael B.,Garcia Alipio,Ponseca Carlito,Salvador Arnel,Sarukura Nobuhiko

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference21 articles.

1. Far-infrared vibrational spectra of all-trans, 9-cis and 13-cis retinal measured by THz time-domain spectroscopy

2. Imaging of large-scale integrated circuits using laser-terahertz emission microscopy

3. Time-domain transillumination of biological tissues with terahertz pulses

4. Terahertz electromagnetic transients as probes of a two‐dimensional electron gas

5. Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current

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