Water absorption and interface reactivity of yttrium oxide gate dielectrics on silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1477268
Reference11 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Investigation of MOS capacitors with thin ZrO2layers and various gate materials for advanced DRAM applications
3. Study of thermally oxidized yttrium films on silicon
4. Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)
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