Atomic layer deposition of dielectric Y2O3 thin films from a homoleptic yttrium formamidinate precursor and water
Author:
Affiliation:
1. Inorganic Materials Chemistry
2. Ruhr University Bochum
3. 44801 Bochum
4. Germany
5. Microsystems Technology
6. RUBION
Abstract
In this work, the application of tris(N,N′-diisopropyl-formamidinato)yttrium(iii) [Y(DPfAMD)3] as a precursor in a water-assisted thermal atomic layer deposition (ALD) process for the fabrication of device quality Y2O3 thin films is demonstrated.
Funder
Deutsche Forschungsgemeinschaft
Bundesministerium für Bildung und Forschung
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2021/RA/D0RA09876K
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