Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence-Reference-Cited by-同舟云学术

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Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence

Published:2015-09-21 Issue:11 Volume:118 Page:115306
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Mukherjee Kunal¹,Norman Andrew G.²^ORCID,Akey Austin J.³,Buonassisi Tonio³,Fitzgerald Eugene A.¹

Affiliation:

1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

2. National Renewable Energy Laboratory, Golden, Colorado 80401, USA

3. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

Funder

National Science Foundation (NSF)

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4930990

Reference54 articles.

1. Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy

2. Observation of vertical honeycomb structure in InAlN∕GaN heterostructures due to lateral phase separation

3. Microstructures of (In,Ga)P alloys grown on GaAs by metalorganic vapor‐phase epitaxy

4. Enhancement of compositional modulation in GaInP epilayers by the addition of surfactants during organometallic vapor phase epitaxy growth

5. Spinodal decomposition in InGaAsP epitaxial layers

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