Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy

Published:2009-07-13 Issue:2 Volume:95 Page:021913
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sahonta S.-L.,Dimitrakopulos G. P.,Kehagias Th.,Kioseoglou J.,Adikimenakis A.,Iliopoulos E.,Georgakilas A.,Kirmse H.,Neumann W.,Komninou Ph.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3184593

Reference15 articles.

1. Current status of AlInN layers lattice-matched to GaN for photonics and electronics

2. InAlN/GaN HEMTs: a first insight into technological optimization

3. Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

4. Barrier-Layer Scaling of InAlN/GaN HEMTs

5. Observation of vertical honeycomb structure in InAlN∕GaN heterostructures due to lateral phase separation

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1. Conduction-band engineering of polar nitride semiconductors with wurtzite ScAlN for near-infrared photonic devices;Journal of Applied Physics;2024-04-22

2. N-polar GaN: Epitaxy, properties, and device applications;Progress in Quantum Electronics;2023-01

3. Elimination of remnant phases in low-temperature growth of wurtzite ScAlN by molecular-beam epitaxy;Journal of Applied Physics;2022-11-07

4. Growth and Characterization of GaN/InxGa1−xN/InyAl1−yN Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy;Crystals;2022-03-17

5. Influence of lattice misfit on crack formation during the epitaxy of In Al1-N on GaN;Journal of Alloys and Compounds;2022-01

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