On the importance of atom probe tomography for the development of new nanoscale devices
Author:
Affiliation:
1. Institute of Physics, University of São Paulo,São Paulo,Brazil
2. Material Science and Engineering, University of Michigan,Ann Arbor,United States
Funder
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - Brasil (CAPES)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9880925/9880936/09881039.pdf?arnumber=9881039
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1. Field penetration and band bending for semiconductor of simple geometries in high electric fields
2. Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence
3. Using Atom-Probe Tomography to Understand ZnO:Al/SiO2/Si Schottky Diodes;jaramillo;Physics Reviews A,2016
4. Sensitivity of heterointerfaces on emission wavelength of quantum cascade lasers
5. Direct examination of Si atoms spatial distribution and clustering in GaAs thin films with atom probe tomography
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