Improved reliability of Au/Si3N4/Ti resistive switching memory cells due to a hydrogen postannealing treatment
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3525991
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1. Nanoionics-based resistive switching memories
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4. Temperature Instability of Resistive Switching on $ \hbox{HfO}_{x}$-Based RRAM Devices
5. Direct observation of microscopic change induced by oxygen vacancy drift in amorphous TiO2 thin films
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