Effect of thickness of metal electrode on the performance of SiNx-based resistive switching devices-Reference-Cited by-同舟云学术

Effect of thickness of metal electrode on the performance of SiNx-based resistive switching devices

Published:2019-01-28 Issue:4 Volume:114 Page:042102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Zhen Fei¹,Gao Hai Xia¹,Yang Mei²,Jiang Peng Fei¹,Ma Xiao Hua¹²,Yang Yin Tang¹

Affiliation:

1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an 710071, China

2. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China

Funder

Union Foundation of Ministry of Education of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5062597

Reference29 articles.

1. I. G. Baek , D. C. Kim , M. J. Lee , H.J. Kim , E. K. Yim , M. S. Lee , J. E. Lee , S. E. Ahn , S. Seo , J. H. Lee , J. C. Park , Y. K. Cha , S. O. Park , H. S. Kim , I. K. Yoo , U. Chung , J. T. Moon , and B. I. Ryu , in IEEE International Devices Meeting 2005, IEDM Technical Digest (2005), p. 750.

2. Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

3. Voltage-Polarity-Independent and High-Speed Resistive Switching Properties of V-Doped $\hbox{SrZrO}_{3}$ Thin Films

4. Improved reliability of Au/Si3N4/Ti resistive switching memory cells due to a hydrogen postannealing treatment

5. Forming-free SiN-based resistive switching memory prepared by RF sputtering

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly Controllable Multilevel Performance in WS₂ Quantum Dots-Based Memristor;IEEE Transactions on Electron Devices;2023-11

2. Effect of the bottom electrode on the digital and analog resistive switching behavior of SiNx-based RRAM;Applied Physics Letters;2023-07-17

3. Exploring conductance modulation and implementation of convolutional neural network in Pt/ZnO/Al2O3/TaN memristors for brain-inspired computing;Ceramics International;2023-06

4. Tuning spectral properties of individual and multiple quantum emitters in noisy environments;Physical Review A;2023-02-21

5. Relationship between resistive switching and Mott transition in atomic layer deposition prepared La2Ti2O7-x thin film;Scripta Materialia;2023-01