Memory Properties of SiOx- and SiNx-Based Memristors-Reference-Cited by-同舟云学术

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Memory Properties of SiOx- and SiNx-Based Memristors

Published:2021-11 Issue:6 Volume:16 Page:722-731
ISSN:2635-1676
Container-title:Nanobiotechnology Reports
language:en
Short-container-title:Nanotechnol Russia

Author:

Gritsenko V. A.,Gismatulin A. A.,Orlov O. M.

Publisher

Pleiades Publishing Ltd

Subject

Electrical and Electronic Engineering,Engineering (miscellaneous),Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://link.springer.com/content/pdf/10.1134/S2635167621060070.pdf

Reference49 articles.

1. E. M. Proidakov, Tsifrov. Ekon. 3 (3), 50 (2018).

2. H. Hu, Y. Wen, T.-S. Chua, and X. Li, IEEE Access. 2, 652 (2014).

3. J. Zakir, T. Seymour, and K. Berg, Iss. Inform. Syst. 16, 81 (2015).

4. F. M. Gafarov, Artificial Neural Networks and Applications (Kazan, Kazan, 2018) [in Russian].

5. K. K. Abgaryan and E. S. Gavrilov, Inform. Primen. 14 (2), 104 (2020).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Memory properties and short-range order in silicon oxynitride-based memristors;Applied Physics Letters;2023-06-05

2. Memristors Based on Many-Layer Non-Stoichiometric Germanosilicate Glass Films;Electronics;2023-02-09

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