Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach
Author:
Funder
U.S. Department of Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4776703
Reference25 articles.
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4. Silicon carbide for high resolution X-ray detectors operating up to 100°C
5. A. Ivanov, E. Kalinina, G. Kholuyanov, N. Strokan, G. Onushkin, A. Konstantinov, A. Hallen, and A. Kuznetsov, in Proceedings of the 5th European Conference on Silicon Carbide and Related Materials 2004, Zurich, Switzerland, edited by R. Nipoti, A. Poggi, and A. Scorzoni (Trans Tech Publications Inc., 2005), p. 1029.
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