Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4742741
Reference11 articles.
1. Silicon carbide and its use as a radiation detector material
2. High-resolution alpha-particle spectrometry using 4H silicon carbide semiconductor detectors
3. The fast neutron response of 4H silicon carbide semiconductor radiation detectors
4. Characterization of Semi-Insulating 4H Silicon Carbide for Radiation Detectors
5. Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide
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1. Enhancing the radiation hardness of vertical 4H–SiC detectors by the metal-oxide-semiconductor structure;Radiation Physics and Chemistry;2024-10
2. Defects in epitaxial 4H-SiC revealed by exciton recombination;Journal of Physics: Condensed Matter;2024-02-01
3. β -rays induced displacement damage on epitaxial 4H-SiC revealed by exciton recombination;Applied Physics Letters;2024-01-22
4. GaN-Based Low-Energy X-Ray Single Photon Detector With Photon Energy Resolution and Fast Response;IEEE Photonics Technology Letters;2024-01-15
5. Effect of Enhanced Hole Transport on the Performance of Ni/Y2O3/n-4H-SiC Epilayer Radiation Detectors;IEEE Transactions on Nuclear Science;2023-09
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