Defects in epitaxial 4H-SiC revealed by exciton recombination

Abstract

Abstract In this work, we conducted an analysis of 4H-SiC epitaxial layer grown on two distinct 4H-SiC substrates (both 6 inches in diameter) using non-invasive techniques such as micro-Raman spectroscopy, steady-state absorption spectroscopy and time-resolved photoluminescence spectroscopy. We have shown that despite the doping homogeneity, confirmed by micro-Raman and steady-state absorption spectroscopy, the carrier lifetime, assessed by monitoring the excitonic band at 3.2 eV by time-resolved photoluminescence spectroscopy, depends on the position on the wafer. This variability is attributed to the presence of defects, such as impurities or point defects, which are not uniformly distributed on the epitaxial layer and that, in addition to extended defects, affect the charge carrier recombination. Additionally, it is found that interactions with the underlying substrate could contribute to these effects as evidenced in regions of the substrate characterized by differences of doping.