Silicon carbide for high resolution X-ray detectors operating up to 100°C-Reference-Cited by-同舟云学术

Silicon carbide for high resolution X-ray detectors operating up to 100°C

Published:2004-04 Issue:3 Volume:522 Page:413-419
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Bertuccio Giuseppe,Casiraghi Roberto,Cetronio Antonio,Lanzieri Claudio,Nava Filippo

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

1. SiC power-switching devices-the second electronics revolution?

2. Silicon carbide benefits and advantages for power electronics circuits and systems

3. SiC microwave power technologies

4. IEEE Trans. Electron Devices 46 (3) (1999) (number dedicated to silicon carbide).

5. R.V. Babcock, H.C. Chang, SiC neutron detectors for high temperature operation, neutron dosimetry, Proceedings of the Symposium on Neutron Detection, Dosimetry and Standardization, Vol. 1, December 1962, International Atomic Energy Agency (IAEA), Vienna, pp. 613–622.

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