High-resolution alpha-particle detector based on Schottky barrier 4H-SiC detector operated at elevated temperatures up to 500 °C

Author:

Gál Norbert,Hrubčín Ladislav,Šagátová AndreaORCID,Vanko Gabriel,Kováčová Eva,Zaťko Bohumír

Funder

Ministerstvo školstva, vedy, výskumu a športu Slovenskej republiky

Agentúra na Podporu Výskumu a Vývoja

VEGA

European Regional Development Fund

Slovenská Akadémia Vied

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference46 articles.

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2. X- and gamma-ray detectors based on bulk semi-insulating GaAs & InP: Present status and prospects;Dubecký;SIMC-XI International Semiconducting And Insulating Materials Conference, Proceedings in,2002

3. Role of electrode technology in radiation detector based on semi-insulating InP in development of detector array;Dubecký;Nucl. Instr. Meth. Phys. Res. A,2004

4. A new kind of quasi-ohmic metallization in semi-insulating GaAs: Study of electrical characteristics;Dubecký;Nucl. Instr. Meth. Phys. Res. A,2009

5. On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs;Zaťko;Nucl. Instr. Meth. Phys. Res. A,2004

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