Investigation on the diffusion barrier properties of sputtered Mo∕W–N thin films in Cu interconnects
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2800382
Reference24 articles.
1. Copper-Based Metallization in ULSI Structures: Part II: Is Cu Ahead of Its Time as an On-Chip Interconnect Material?
2. Diffusion of Metals in Silicon Dioxide
3. Formation of copper silicides from Cu(100)/Si(100) and Cu(111)/Si(111) structures
4. The formation of Cu3Si: Marker experiments
5. Diffusion barriers in thin films
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