Kinetics of low-temperature activation of acceptors in magnesium-doped gallium nitride epilayers grown by metal-organic vapor-phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2168232
Reference10 articles.
1. Hole Compensation Mechanism of P-Type GaN Films
2. Electrical transport properties of highly Mg-doped GaN epilayers grown by MOCVD
3. Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition
4. Activation mechanism of annealed Mg-doped GaN in air
5. Electrical characterization of Mg-related energy levels and the compensation mechanism in GaN:Mg
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1. High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials;Journal of Applied Physics;2020-08-28
2. High Temperature Annealing of MBE-grown Mg-doped GaN;Journal of Physics: Conference Series;2017-06
3. Ti/Al-based contacts to p-type SiC and GaN for power device applications;physica status solidi (a);2016-11-11
4. Electrical transport phenomena in magnesium-doped p-type GaN;physica status solidi (b);2008-12-19
5. Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy;Applied Physics Letters;2008-10-27
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