Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy

Published:2008-10-27 Issue:17 Volume:93 Page:172117
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Suski T.,Litwin-Staszewska E.,Piotrzkowski R.,Czernecki R.,Krysko M.,Grzanka S.,Nowak G.,Franssen G.,Dmowski L. H.,Leszczynski M.,Perlin P.,Łucznik B.,Grzegory I.,Jakieła R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3013352

Reference10 articles.

1. Electrical properties ofp-type GaN:Mg codoped with oxygen

2. Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy

3. Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate

4. Molecular-beam epitaxy of p-type m-plane GaN

5. Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates

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