Electrical characterization of Mg-related energy levels and the compensation mechanism in GaN:Mg
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
2. Hole Compensation Mechanism of P-Type GaN Films
3. On p‐type doping in GaN—acceptor binding energies
4. p‐type conduction in Mg‐doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy
5. Hongqiang Lu, Ishwara Bhat;Huang;Appl. Phys. Lett.,1996
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