Dc and ac electrical response of MOCVD grown GaN in p-i-n structure, assessed through I–V and admittance measurement-Reference-Cited by-同舟云学术

Dc and ac electrical response of MOCVD grown GaN in p-i-n structure, assessed through I–V and admittance measurement

Published:2017-11-29 Issue:50 Volume:50 Page:505109
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Kuruoğlu Neslihan Ayarcı^ORCID,Özdemir Orhan,Bozkurt Kutsal,Sundaram Suresh,Salvestrini Jean-Paul,Ougazzaden Abdallah,Gaimard Quentin,Belahsene Sofiane,Merghem Kamel,Ramdane Abderrahim

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6463/aa98b2/pdf

Reference36 articles.

1. Performance evaluation of high-power wide band-gap semiconductor rectifiers

2. GaN, AlN, and InN: A review

3. Temperature-dependent ac current-voltage-capacitance characteristics of GaN-based light-emitting diodes under high forward bias

4. Tunneling entity in different injection regimes of InGaN light emitting diodes

5. Prospects for LED lighting

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