Transport and storage dynamics of 30% In-rich InGaN/GaN MQW LED p–i–n structure
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6463/ab1f9b/pdf
Reference29 articles.
1. Reduction of Ohmic Contact Resistance on n-Type 6H-SiC by Heavy Doping
2. Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths
3. Effect of localization states on the electroluminescence spectral width of blue–green light emitting InGaN/GaN multiple quantum wells
4. Enhanced localisation effect and reduced quantum-confined Stark effect of carriers in InGaN/GaN multiple quantum wells embedded in nanopillars
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1. Relation between thermal quenching of photoluminescence and negative capacitance on InGaN/GaN multiple quantum wells in p-i-n structure;Journal of Luminescence;2023-05
2. Enhanced absorption in the space charge region of GaAs solar cells;EPL (Europhysics Letters);2021-11-24
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