Electrical transport phenomena in magnesium-doped p-type GaN-Reference-Cited by-同舟云学术

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Electrical transport phenomena in magnesium-doped p-type GaN

Published:2008-12-19 Issue:3 Volume:246 Page:658-663
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Konczewicz Leszek,Litwin-Staszewska Elżbieta,Contreras Sylvie,Piotrzkowski Ryszard,Dmowski Lesław

Funder

CNRS (France) and PAN (Poland) in the frame of Associated European Laboratory “NODLab”

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.200880521/fullpdf

Reference14 articles.

1. Hole Compensation Mechanism of P-Type GaN Films

2. Kinetics of low-temperature activation of acceptors in magnesium-doped gallium nitride epilayers grown by metal-organic vapor-phase epitaxy

3. Heavy doping effects in Mg-doped GaN

4. Electrical transport properties of highly Mg-doped GaN epilayers grown by MOCVD

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy;Applied Physics Letters;2013-07-15

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