Ab initio molecular dynamics simulations of properties of a-Al2O3 /vacuum and a-ZrO2 /vacuum vs a-Al2O3∕Ge(100)(2×1) and a-ZrO2∕Ge(100)(2×1) interfaces-Reference-Cited by-同舟云学术

Ab initio molecular dynamics simulations of properties of a-Al2O3 /vacuum and a-ZrO2 /vacuum vs a-Al2O3∕Ge(100)(2×1) and a-ZrO2∕Ge(100)(2×1) interfaces

Published:2009-03-28 Issue:12 Volume:130 Page:124717
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:The Journal of Chemical Physics

Author:

Chagarov Evgueni A.,Kummel Andrew C.

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3078035

Reference74 articles.

1. High Mobility Strained Ge pMOSFETs With High-$\kappa$ /Metal Gate

2. Device structures and carrier transport properties of advanced CMOS using high mobility channels

3. High performance germanium MOSFETs

4. Interfacial atomic structures, energetics and band offsets of Ge:ZrO2 interfaces

5. Fluorine incorporation at HfO2∕SiO2 interfaces in high-k metal-oxide-semiconductor gate stacks: Local electronic structure

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