Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2O3 on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3213545
Reference16 articles.
1. Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling
2. Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs
3. HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition
4. Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3
5. Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As
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